-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
63J7709
|
Newark | N Channel Mosfet, 55V, 47A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:47A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRLZ44NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 101042 |
|
$0.3270 / $0.5200 | Buy Now |
DISTI #
IRLZ44NPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 47A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRLZ44NPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Tube | 712 |
|
$0.3798 / $0.4724 | Buy Now |
DISTI #
63J7709
|
Avnet Americas | Trans MOSFET N-CH 55V 47A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7709) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 3554 Partner Stock |
|
$0.3860 / $0.9520 | Buy Now |
DISTI #
70017121
|
RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.022Ohm, ID 47A, TO-220AB, PD 110W, VGS +/-16V | Infineon IRLZ44NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Bulk | 19 |
|
$0.9100 / $1.2100 | Buy Now |
|
Rochester Electronics | IRLZ44NPBF - PLANAR 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 | 3500 |
|
$0.4519 / $0.5317 | Buy Now |
DISTI #
IRLZ44NPBF
|
TME | Transistor: N-MOSFET, unipolar, 55V, 41A, 83W, TO220AB Min Qty: 1 | 15 |
|
$0.3960 / $0.8700 | Buy Now |
DISTI #
C1S327400160775
|
Chip1Stop | MOSFET RoHS: Compliant Container: Tube | 12833 |
|
$0.3090 / $0.5420 | Buy Now |
DISTI #
SP001568772
|
EBV Elektronik | Trans MOSFET N-CH 55V 47A 3-Pin(3+Tab) TO-220AB (Alt: SP001568772) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 9 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
LCSC | 55V 47A 110W 0.0255.0V25A 1V250uA 1 N-channel TO-220AB MOSFETs ROHS | 422 |
|
$0.3726 / $0.6712 | Buy Now |
|
Win Source Electronics | MOSFET N-CH 55V 47A TO-220AB / Trans MOSFET N-CH 55V 47A 3-Pin(3+Tab) TO-220AB Tube | 10000 |
|
$0.8240 / $1.2359 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRLZ44NPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRLZ44NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 210 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 47 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |