Memory
IS41LV82002-50J
Integrated Silicon Solution Inc
Description: EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

Overview of IS41LV82002-50J by Integrated Silicon Solution Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

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Part Data Attributes for IS41LV82002-50J by Integrated Silicon Solution Inc

IS41LV82002-50J
Integrated Silicon Solution Inc
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
SOJ
Package Description
0.300 INCH, SOJ-28
Pin Count
28
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FAST PAGE WITH EDO
Access Time-Max
50 ns
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type
COMMON
JESD-30 Code
R-PDSO-J28
JESD-609 Code
e0
Length
18.161 mm
Memory Density
16777216 bit
Memory IC Type
EDO DRAM
Memory Width
8
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
1
Number of Terminals
28
Number of Words
2097152 words
Number of Words Code
2000000
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
2MX8
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
SOJ
Package Equivalence Code
SOJ28,.34
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Qualification Status
Not Qualified
Refresh Cycles
2048
Seated Height-Max
3.556 mm
Self Refresh
NO
Standby Current-Max
0.0005 A
Supply Current-Max
0.12 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
J BEND
Terminal Pitch
1.27 mm
Terminal Position
DUAL
Width
7.62 mm
Want to compare parts?
  1. IS41LV82002-50J
    Integrated Silicon Solution Inc
    EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
    VS

Alternate Parts for IS41LV82002-50J

This table gives cross-reference parts and alternative options found for IS41LV82002-50J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS41LV82002-50J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4E170812D-BC500 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Samsung Semiconductor IS41LV82002-50J vs K4E170812D-BC500
IS41LV82002-50JI EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Integrated Silicon Solution Inc IS41LV82002-50J vs IS41LV82002-50JI
MT4LC2M8E7DJ-5STR EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Micron Technology Inc IS41LV82002-50J vs MT4LC2M8E7DJ-5STR
KM48V2004CK-5 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor IS41LV82002-50J vs KM48V2004CK-5
K4E160812D-BC50 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Samsung Semiconductor IS41LV82002-50J vs K4E160812D-BC50
K4E170812C-BC500 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor IS41LV82002-50J vs K4E170812C-BC500
KM48V2104CK-5 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor IS41LV82002-50J vs KM48V2104CK-5
MT4LC2M8E7DJ-5S EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Micron Technology Inc IS41LV82002-50J vs MT4LC2M8E7DJ-5S
K4E170812D-BL500 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Samsung Semiconductor IS41LV82002-50J vs K4E170812D-BL500
K4E170812C-BL500 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor IS41LV82002-50J vs K4E170812C-BL500
Part Number Description Manufacturer Compare
MSM51V17805BSL-50TS-K EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 OKI Electric Industry Co Ltd IS41LV82002-50J vs MSM51V17805BSL-50TS-K
HY51V17805BRC-50 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, REVERSE, TSOP2-28 SK Hynix Inc IS41LV82002-50J vs HY51V17805BRC-50
MSM51V16805DSL-50TS-K EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 LAPIS Semiconductor Co Ltd IS41LV82002-50J vs MSM51V16805DSL-50TS-K
IBM0117805PJ1-50 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 IBM IS41LV82002-50J vs IBM0117805PJ1-50
GM71V17803CT-5 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, LG Semicon Co Ltd IS41LV82002-50J vs GM71V17803CT-5
KM48V2004CK-5 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor IS41LV82002-50J vs KM48V2004CK-5
MB81V17805B-50PFTN EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28 FUJITSU Limited IS41LV82002-50J vs MB81V17805B-50PFTN
MSM51V17805DSL-50TS-K EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 LAPIS Semiconductor Co Ltd IS41LV82002-50J vs MSM51V17805DSL-50TS-K
MSM51V17805D-50JS EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-28 LAPIS Semiconductor Co Ltd IS41LV82002-50J vs MSM51V17805D-50JS
GM71VS17803CJ-5 EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, LG Semicon Co Ltd IS41LV82002-50J vs GM71VS17803CJ-5

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