Datasheets
IS42S32160C-6BI by: Integrated Silicon Solution Inc

Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, MS-207, WBGA-90

Part Details for IS42S32160C-6BI by Integrated Silicon Solution Inc

Results Overview of IS42S32160C-6BI by Integrated Silicon Solution Inc

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IS42S32160C-6BI Information

IS42S32160C-6BI by Integrated Silicon Solution Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Part Details for IS42S32160C-6BI

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IS42S32160C-6BI Part Data Attributes

IS42S32160C-6BI Integrated Silicon Solution Inc
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IS42S32160C-6BI Integrated Silicon Solution Inc Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, MS-207, WBGA-90
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code DSBGA
Package Description LFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e0
Length 13 mm
Memory Density 536870912 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 16MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.4 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.004 A
Supply Current-Max 0.3 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for IS42S32160C-6BI

This table gives cross-reference parts and alternative options found for IS42S32160C-6BI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S32160C-6BI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IS42S32160C-6BLI Integrated Silicon Solution Inc Check for Price Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207, WBGA-90 IS42S32160C-6BI vs IS42S32160C-6BLI
Part Number Manufacturer Composite Price Description Compare
MT48H16M32LGCM-6L Micron Technology Inc Check for Price Synchronous DRAM, 16MX32, 5ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 IS42S32160C-6BI vs MT48H16M32LGCM-6L
MT46HC16M32LFCX-54:B Micron Technology Inc Check for Price DDR DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, GREEN, PLASTIC, VFBGA-90 IS42S32160C-6BI vs MT46HC16M32LFCX-54:B
K4M513233C-SF7L0 Samsung Semiconductor Check for Price Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, FBGA-90 IS42S32160C-6BI vs K4M513233C-SF7L0
MT48H16M32LGCM-75IT:B Micron Technology Inc Check for Price Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 10 X 13 MM, GREEN, VFBGA-90 IS42S32160C-6BI vs MT48H16M32LGCM-75IT:B
MT48H16M32LGCM-6LIT Micron Technology Inc Check for Price Synchronous DRAM, 16MX32, 5ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 IS42S32160C-6BI vs MT48H16M32LGCM-6LIT
MT46H16M32LGCM-54LIT:B Micron Technology Inc Check for Price DDR DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 IS42S32160C-6BI vs MT46H16M32LGCM-54LIT:B
IS42S32160B-75BLI Integrated Silicon Solution Inc Check for Price Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, LEAD FREE, LFBGA-90 IS42S32160C-6BI vs IS42S32160B-75BLI
K4S513233F-EF750 Samsung Semiconductor Check for Price Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 IS42S32160C-6BI vs K4S513233F-EF750
MT46H16M32LGCM-6LIT:B Micron Technology Inc Check for Price DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 IS42S32160C-6BI vs MT46H16M32LGCM-6LIT:B
H5MS5132DFR-L3M SK Hynix Inc Check for Price DDR DRAM, 16MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LEAD FREE, FBGA-90 IS42S32160C-6BI vs H5MS5132DFR-L3M

IS42S32160C-6BI Related Parts

IS42S32160C-6BI Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IS42S32160C-6BI is 0°C to 95°C.

  • To ensure signal integrity and reduce noise, use a well-designed PCB with proper impedance matching, decoupling, and shielding. Also, follow the recommended routing and termination guidelines in the datasheet.

  • The recommended refresh rate for the IS42S32160C-6BI is 8192 refreshes per second, with a refresh interval of 7.8us.

  • No, the IS42S32160C-6BI is designed to operate at a voltage supply of 1.2V ± 0.06V. Using a different voltage supply may affect its performance, reliability, or even damage the device.

  • Implement error detection and correction mechanisms, such as ECC (Error-Correcting Code) or CRC (Cyclic Redundancy Check), to detect and correct errors. Also, design a retry mechanism to handle errors and timeouts.

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