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Part Details for ISL73024SEHML by Renesas Electronics Corporation
Overview of ISL73024SEHML by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| ISL73024SEHML | Renesas Electronics Corporation | 200V, 7.5A Enhancement Mode GaN Power Transistors |
Price & Stock for ISL73024SEHML
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
ISL73024SEHML
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Avnet Americas | RADIATION HARDENED 200V GAN FET SMD PKG LDR - Trays (Alt: ISL73024SEHML) RoHS: Compliant Min Qty: 25 Package Multiple: 1 Lead time: 26 Weeks, 1 Days Container: Tray | 111 Factory Stock |
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$381.3333 | Buy Now |
|
DISTI #
ISL73024SEHML
|
Avnet Silica | RADIATION HARDENED 200V GAN FET SMD PKG LDR (Alt: ISL73024SEHML) RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 20 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for ISL73024SEHML
ISL73024SEHML CAD Models
ISL73024SEHML Part Data Attributes
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ISL73024SEHML
Renesas Electronics Corporation
Buy Now
Datasheet
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ISL73024SEHML
Renesas Electronics Corporation
200V, 7.5A Enhancement Mode GaN Power Transistors, CLCC, /Tray
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | CLCC | |
| Package Description | , | |
| Pin Count | 4 | |
| Manufacturer Package Code | J4.A | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks, 1 Day | |
| Samacsys Manufacturer | Renesas Electronics | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 7.5 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Feedback Cap-Max (Crss) | 1 pF | |
| JESD-30 Code | R-XBCC-N4 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | Gold (Au) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |