Part Details for ISL73096EHVX by Renesas Electronics Corporation
Overview of ISL73096EHVX by Renesas Electronics Corporation
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Applications
Education and Research
Aerospace and Defense
Communication and Networking
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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ISL73096EHVX | Renesas Electronics Corporation | Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays |
Part Details for ISL73096EHVX
ISL73096EHVX CAD Models
ISL73096EHVX Part Data Attributes
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ISL73096EHVX
Renesas Electronics Corporation
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Datasheet
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ISL73096EHVX
Renesas Electronics Corporation
Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays, DIE, /
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | DIE | |
Package Description | , | |
Manufacturer Package Code | ISLDUMMY00 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.40 | |
Samacsys Manufacturer | Renesas Electronics | |
Additional Feature | LOW NOISE | |
Collector Current-Max (IC) | 0.0113 A | |
Collector-Emitter Voltage-Max | 8 V | |
Configuration | SEPARATE, 5 ELEMENTS | |
DC Current Gain-Min (hFE) | 40 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-XUUC-N16 | |
JESD-609 Code | e4 | |
Number of Elements | 5 | |
Number of Terminals | 16 | |
Operating Temperature-Max | 125 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Polarity/Channel Type | NPN AND PNP | |
Power Dissipation Ambient-Max | 1.25 W | |
Reference Standard | MIL-38535; RH - 100K Rad(Si) | |
Surface Mount | YES | |
Terminal Finish | GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 8000 MHz | |
VCEsat-Max | 0.5 V |