Part Details for ISL9N302AP3 by Rochester Electronics LLC
Overview of ISL9N302AP3 by Rochester Electronics LLC
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for ISL9N302AP3
ISL9N302AP3 CAD Models
ISL9N302AP3 Part Data Attributes
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ISL9N302AP3
Rochester Electronics LLC
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Datasheet
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ISL9N302AP3
Rochester Electronics LLC
75A, 30V, 0.0033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | NOT APPLICABLE | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for ISL9N302AP3
This table gives cross-reference parts and alternative options found for ISL9N302AP3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ISL9N302AP3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPB20N60S5 | 20A, 600V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Rochester Electronics LLC | ISL9N302AP3 vs SPB20N60S5 |
| FQI6N50TU | 5.5A, 500V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | Rochester Electronics LLC | ISL9N302AP3 vs FQI6N50TU |
| IRFI830 | Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | International Rectifier | ISL9N302AP3 vs IRFI830 |
| IPD04N03LBG | 50A, 30V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Rochester Electronics LLC | ISL9N302AP3 vs IPD04N03LBG |
| RFP12N18 | 12A, 180V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | ISL9N302AP3 vs RFP12N18 |
| FQB10N20CTM | 9.5A, 200V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3 | Rochester Electronics LLC | ISL9N302AP3 vs FQB10N20CTM |
| IRF351 | Power Field-Effect Transistor, 15A I(D), 350V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | ISL9N302AP3 vs IRF351 |
| SSH8N80A | Power Field-Effect Transistor, 8A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | ISL9N302AP3 vs SSH8N80A |
| SPP04N60S5 | 4.5A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Rochester Electronics LLC | ISL9N302AP3 vs SPP04N60S5 |
| FQPF5N50 | 3A, 500V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN | Rochester Electronics LLC | ISL9N302AP3 vs FQPF5N50 |