Part Details for ISL9N306AS3ST by Fairchild Semiconductor Corporation
Overview of ISL9N306AS3ST by Fairchild Semiconductor Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for ISL9N306AS3ST
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 75A, 30V, N-Channel Power MOSFET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 35531 |
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$0.3191 / $0.3754 | Buy Now |
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Chip1Cloud | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs | 1060 |
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RFQ | |
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Perfect Parts Corporation | 245 |
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RFQ |
Part Details for ISL9N306AS3ST
ISL9N306AS3ST CAD Models
ISL9N306AS3ST Part Data Attributes
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ISL9N306AS3ST
Fairchild Semiconductor Corporation
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Datasheet
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ISL9N306AS3ST
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.006 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for ISL9N306AS3ST
This table gives cross-reference parts and alternative options found for ISL9N306AS3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ISL9N306AS3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDB8896_NL | Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE PACKAGE-3 | Fairchild Semiconductor Corporation | ISL9N306AS3ST vs FDB8896_NL |
FDB7042L | 50A, 30V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | ISL9N306AS3ST vs FDB7042L |