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Transistors Power Field-Effect Transistors ISL9N312AD3ST

Transistors
ISL9N312AD3ST
Description: Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

Overview of ISL9N312AD3ST by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for ISL9N312AD3ST by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Rochester Electronics 50A, 30V, 0.012ohm, N-Channel Power MOSFET, TO-252AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 2500
  • 1 $0.2958
  • 25 $0.2899
  • 100 $0.2781
  • 500 $0.2662
  • 1,000 $0.2514
$0.2514 / $0.2958 Buy Now

CAD Models for ISL9N312AD3ST by Fairchild Semiconductor Corporation
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Part Data Attributes for ISL9N312AD3ST by Fairchild Semiconductor Corporation
Parametric Data

ISL9N312AD3ST
Fairchild Semiconductor Corporation
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-252AA
Package Description
DPAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
50 A
Drain-source On Resistance-Max
0.012 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
75 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. ISL9N312AD3ST
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
    VS

Alternate Parts for ISL9N312AD3ST

This table gives cross-reference parts and alternative options found for ISL9N312AD3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ISL9N312AD3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDD8882 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 Rochester Electronics LLC ISL9N312AD3ST vs FDD8882
FDD8882 Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Fairchild Semiconductor Corporation ISL9N312AD3ST vs FDD8882
ISL9N312AD3ST_NL 50A, 30V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 Rochester Electronics LLC ISL9N312AD3ST vs ISL9N312AD3ST_NL
FDD8882 N-Channel PowerTrench® MOSFET 30V, 55A, 11.5mΩ, 2500-REEL onsemi ISL9N312AD3ST vs FDD8882
ISL9N312AD3ST_NL Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Fairchild Semiconductor Corporation ISL9N312AD3ST vs ISL9N312AD3ST_NL
FDD6035AL 46A, 30V, 0.0125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN Rochester Electronics LLC ISL9N312AD3ST vs FDD6035AL
Part Number Description Manufacturer Compare
ISL9N312AD3ST 50A, 30V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 Rochester Electronics LLC ISL9N312AD3ST vs ISL9N312AD3ST
ISL9N312AD3ST_NL 50A, 30V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 Rochester Electronics LLC ISL9N312AD3ST vs ISL9N312AD3ST_NL
ISL9N312AD3ST_NL Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Fairchild Semiconductor Corporation ISL9N312AD3ST vs ISL9N312AD3ST_NL
FDD8882 Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Fairchild Semiconductor Corporation ISL9N312AD3ST vs FDD8882
FDD8882 N-Channel PowerTrench® MOSFET 30V, 55A, 11.5mΩ, 2500-REEL onsemi ISL9N312AD3ST vs FDD8882
FDD6035AL 46A, 30V, 0.0125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN Rochester Electronics LLC ISL9N312AD3ST vs FDD6035AL

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