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Transistors IGBTs ISL9V2540S3ST

Transistors
ISL9V2540S3ST
Description: Insulated Gate Bipolar Transistor, 15.5A I(C), 430V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

Overview of ISL9V2540S3ST by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for ISL9V2540S3ST by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-ISL9V2540S3ST-ND
DigiKey INSULATED GATE BIPOLAR TRANSISTO Min Qty: 213 Container: Bulk MARKETPLACE PRODUCT 16216
In Stock
  • 213 $1.4100
$1.4100 Buy Now
Bristol Electronics   365
RFQ
Rochester Electronics Insulated Gate Bipolar Transistor, 15.5A, 430V, N-Channel, TO-263AB RoHS: Compliant Status: Active Min Qty: 1 1575
  • 1 $1.4200
  • 25 $1.4000
  • 100 $1.3400
  • 500 $1.2800
  • 1,000 $1.2100
$1.2100 / $1.4200 Buy Now

CAD Models for ISL9V2540S3ST by Fairchild Semiconductor Corporation
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Part Data Attributes for ISL9V2540S3ST by Fairchild Semiconductor Corporation
Parametric Data

ISL9V2540S3ST
Fairchild Semiconductor Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
Package Description
ROHS COMPLIANT, PLASTIC, D2PAK-3
Pin Count
2
Manufacturer Package Code
2LD,TO263, SURFACE MOUNT
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
COLLECTOR
Collector Current-Max (IC)
15.5 A
Collector-Emitter Voltage-Max
430 V
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate-Emitter Thr Voltage-Max
2.2 V
Gate-Emitter Voltage-Max
12 V
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
166.7 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
6000 ns
Turn-on Time-Nom (ton)
2780 ns
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  1. ISL9V2540S3ST
    Fairchild Semiconductor Corporation
    Insulated Gate Bipolar Transistor, 15.5A I(C), 430V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
    VS

Alternate Parts for ISL9V2540S3ST

This table gives cross-reference parts and alternative options found for ISL9V2540S3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ISL9V2540S3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
ISL9V2540S3ST IGBT, 430V, 15A, 1.77V, 250mJ, D2PAK EcoSPARK® I, N-Channel Ignition, 800-REEL, Automotive Qualified onsemi ISL9V2540S3ST vs ISL9V2540S3ST
ISL9V2540S3S Insulated Gate Bipolar Transistor, 15.5A I(C), 390V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 Fairchild Semiconductor Corporation ISL9V2540S3ST vs ISL9V2540S3S
Part Number Description Manufacturer Compare
ISL9V2540S3S Insulated Gate Bipolar Transistor, 15.5A I(C), 390V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 Fairchild Semiconductor Corporation ISL9V2540S3ST vs ISL9V2540S3S
ISL9V2540S3ST IGBT, 430V, 15A, 1.77V, 250mJ, D2PAK EcoSPARK® I, N-Channel Ignition, 800-REEL, Automotive Qualified onsemi ISL9V2540S3ST vs ISL9V2540S3ST

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