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ISL9V3040S3S by:

Insulated Gate Bipolar Transistor

Part Details for ISL9V3040S3S by onsemi

Overview of ISL9V3040S3S by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for ISL9V3040S3S

Part # Distributor Description Stock Price Buy
Chip1Cloud EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT | IGBT 430V 21A 150W TO263AB 15000
RFQ

Part Details for ISL9V3040S3S

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ISL9V3040S3S Part Data Attributes:

ISL9V3040S3S onsemi
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ISL9V3040S3S onsemi Insulated Gate Bipolar Transistor
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 21 A
Collector-Emitter Voltage-Max 390 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Fall Time-Max (tf) 15000 ns
Gate-Emitter Thr Voltage-Max 2.2 V
Gate-Emitter Voltage-Max 10 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Rise Time-Max (tr) 7000 ns
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application AUTOMOTIVE IGNITION
Transistor Element Material SILICON
Turn-off Time-Max (toff) 30000 ns
Turn-off Time-Nom (toff) 7600 ns
Turn-on Time-Max (ton) 11000 ns
Turn-on Time-Nom (ton) 2800 ns
VCEsat-Max 1.6 V

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