Datasheets
IXA17IF1200HJ by:

Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, PLASTIC, ISOPLUS247, COPACK-3

Part Details for IXA17IF1200HJ by IXYS Corporation

Overview of IXA17IF1200HJ by IXYS Corporation

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Price & Stock for IXA17IF1200HJ

Part # Distributor Description Stock Price Buy
DISTI # IXA17IF1200HJ-ND
DigiKey IGBT 1200V 28A 100W TO247 Min Qty: 300 Lead time: 43 Weeks Container: Tube Temporarily Out of Stock
  • 300 $8.5171
$8.5171 Buy Now
DISTI # 747-IXA17IF1200HJ
Mouser Electronics IGBTs XPT 1200V IGBT GenX3 XPT IGBTs RoHS: Compliant 371
  • 1 $14.4500
  • 10 $12.7600
  • 30 $12.3700
  • 60 $11.6900
  • 120 $11.0000
  • 270 $8.7800
  • 510 $8.5100
$8.5100 / $14.4500 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 28 Weeks Container: Tube 0
Tube
  • 30 $3.0300
$3.0300 Buy Now
Sense Electronic Company Limited TO-247-3 3236
RFQ

Part Details for IXA17IF1200HJ

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IXA17IF1200HJ Part Data Attributes

IXA17IF1200HJ IXYS Corporation
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IXA17IF1200HJ IXYS Corporation Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, PLASTIC, ISOPLUS247, COPACK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-247AD
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Manufacturer Package Code ISOPLUS
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 28 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Reference Standard IEC-60747
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 350 ns
Turn-on Time-Nom (ton) 110 ns
VCEsat-Max 2.1 V

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