Datasheets
IXBH16N170 by:

Insulated Gate Bipolar Transistor, 40A I(C), 1700V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

Part Details for IXBH16N170 by IXYS Corporation

Overview of IXBH16N170 by IXYS Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for IXBH16N170

Part # Distributor Description Stock Price Buy
DISTI # IXBH16N170-ND
DigiKey IGBT 1700V 40A TO247AD Min Qty: 1 Lead time: 35 Weeks Container: Tube Temporarily Out of Stock
  • 1 $16.5800
  • 30 $13.4247
  • 120 $12.6350
  • 510 $11.4505
$11.4505 / $16.5800 Buy Now
DISTI # 747-IXBH16N170
Mouser Electronics IGBT Transistors 1700V 25A RoHS: Compliant 0
  • 1 $16.5900
  • 10 $16.5800
$16.5800 / $16.5900 Order Now
Future Electronics IXBH Series 1700 Vce 40 A 38 ns t(on) Bipolar MOS Transistor - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube 0
Tube
  • 1 $11.3800
  • 5 $11.2400
  • 25 $11.1000
  • 75 $11.0000
  • 200 $10.8400
$10.8400 / $11.3800 Buy Now
DISTI # IXBH16N170
TTI IGBT Transistors 1700V 25A Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $11.4500
  • 510 $11.1700
  • 3,000 $10.4200
$10.4200 / $11.4500 Buy Now
DISTI # IXBH16N170
TME Transistor: IGBT, BiMOSFET™, 1.7kV, 16A, 250W, TO247-3 Min Qty: 1 0
  • 1 $17.1400
  • 3 $15.3100
  • 10 $13.5800
  • 30 $12.1800
$12.1800 / $17.1400 RFQ
New Advantage Corporation IGBT DIS.DIODE SINGLE 16A 1700V BIMOSFET TO247 RoHS: Compliant Min Qty: 1 Package Multiple: 1 62
  • 16 $22.5600
  • 62 $21.0600
$21.0600 / $22.5600 Buy Now

Part Details for IXBH16N170

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IXBH16N170 Part Data Attributes:

IXBH16N170 IXYS Corporation
Buy Now Datasheet
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IXBH16N170 IXYS Corporation Insulated Gate Bipolar Transistor, 40A I(C), 1700V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 940 ns
Turn-on Time-Nom (ton) 220 ns

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