Part Details for IXBN42N170A by Littelfuse Inc
Overview of IXBN42N170A by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IXBN42N170A
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
03AH0373
|
Newark | Discigbtbimosfet-Hivolt Sot-227B(Mini)/ Tube |Littelfuse IXBN42N170A RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$27.4700 | Buy Now |
Part Details for IXBN42N170A
IXBN42N170A CAD Models
IXBN42N170A Part Data Attributes
|
IXBN42N170A
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXBN42N170A
Littelfuse Inc
Insulated Gate Bipolar Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 38 A | |
Collector-Emitter Voltage-Max | 1700 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 313 W | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 308 ns | |
Turn-on Time-Nom (ton) | 33 ns | |
VCEsat-Max | 6 V |