There are no models available for this part yet.
Overview of IXBR42N170 by IXYS Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IXBR42N170 by IXYS Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IXBR42N170-ND
|
DigiKey | IGBT 1700V 57A 200W ISOPLUS247 Lead time: 24 Weeks Container: Tube | Temporarily Out of Stock |
|
Buy Now | ||
|
DISTI #
747-IXBR42N170
|
Mouser Electronics | IGBTs 57Amps 1700V RoHS: Compliant | 0 |
|
$23.7500 / $27.1500 | Order Now |
CAD Models for IXBR42N170 by IXYS Corporation
Part Data Attributes for IXBR42N170 by IXYS Corporation
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
IXYS CORP
|
|
Part Package Code
|
TO-247AD
|
|
Package Description
|
PLASTIC, ISOPLUS247, TO-247AD, 3 PIN
|
|
Pin Count
|
247
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Case Connection
|
ISOLATED
|
|
Collector Current-Max (IC)
|
57 A
|
|
Collector-Emitter Voltage-Max
|
1700 V
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
Gate-Emitter Thr Voltage-Max
|
5.5 V
|
|
Gate-Emitter Voltage-Max
|
20 V
|
|
JESD-30 Code
|
R-PSIP-T3
|
|
JESD-609 Code
|
e1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
200 W
|
|
Qualification Status
|
Not Qualified
|
|
Reference Standard
|
UL RECOGNIZED
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
10
|
|
Transistor Application
|
POWER CONTROL
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Nom (toff)
|
1070 ns
|
|
Turn-on Time-Nom (ton)
|
224 ns
|
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