Part Details for IXBT24N170 by IXYS Corporation
Overview of IXBT24N170 by IXYS Corporation
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXBT24N170
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXBT24N170-ND
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DigiKey | IGBT 1700V 60A TO268AA Min Qty: 300 Lead time: 35 Weeks Container: Tube | Temporarily Out of Stock |
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$16.3799 | Buy Now |
DISTI #
747-IXBT24N170
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Mouser Electronics | IGBTs BiMOSFETs/Reverse Conducting IGBTs RoHS: Compliant | 0 |
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$16.3700 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 24 Weeks Container: Tube | 0Tube |
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$16.7400 | Buy Now |
DISTI #
IXBT24N170
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TTI | IGBTs BiMOSFETs/Reverse Conducting IGBTs Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$15.5000 | Buy Now |
DISTI #
IXBT24N170
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TME | Transistor: IGBT, BiMOSFET™, 1.7kV, 24A, 250W, TO268 Min Qty: 1 | 23 |
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$23.0000 / $28.4700 | Buy Now |
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New Advantage Corporation | IGBT DIS.DIODE SINGLE 24A 1700V BIMOSFET TO268(D3P RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 24 |
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$43.9600 / $47.1000 | Buy Now |
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Sense Electronic Company Limited | TO-268AA | 2802 |
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RFQ |
Part Details for IXBT24N170
IXBT24N170 CAD Models
IXBT24N170 Part Data Attributes
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IXBT24N170
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXBT24N170
IXYS Corporation
Insulated Gate Bipolar Transistor, 60A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-268AA | |
Package Description | TO-268, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 60 A | |
Collector-Emitter Voltage-Max | 1700 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-268AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 1285 ns | |
Turn-on Time-Nom (ton) | 190 ns |