IXBT42N170-TRL
Description: Insulated Gate Bipolar Transistor,

Overview of IXBT42N170-TRL by IXYS Corporation

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  • Distributor Offerings: ( 5 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for IXBT42N170-TRL by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 238-IXBT42N170-TRLTR-ND
DigiKey IGBT 1700V 80A TO268 Min Qty: 400 Lead time: 35 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 400 $16.2617
$16.2617 Buy Now
DISTI # 747-IXBT42N170-TRL
Mouser Electronics MOSFETs IXBT42N170 TRL RoHS: Compliant 0
  • 400 $16.2700
$16.2700 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 400 Lead time: 24 Weeks Container: Reel 0
Reel
  • 400 $22.4900
$22.4900 Buy Now
DISTI # IXBT42N170-TRL
TTI MOSFETs IXBT42N170 TRL Min Qty: 400 Package Multiple: 400 Container: Reel Americas - 0
  • 400 $16.1100
$16.1100 Buy Now
Sense Electronic Company Limited TO-268 4127
RFQ

CAD Models for IXBT42N170-TRL by IXYS Corporation
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Part Data Attributes for IXBT42N170-TRL by IXYS Corporation

IXBT42N170-TRL
IXYS Corporation
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Package Description
TO-268, 3/2 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
80 A
Collector-Emitter Voltage-Max
1700 V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max
5.5 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-268AA
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
360 W
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
1070 ns
Turn-on Time-Nom (ton)
224 ns
VCEsat-Max
2.8 V
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