Part Details for IXDH20N120 by Littelfuse Inc
Overview of IXDH20N120 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXDH20N120
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
03AH0405
|
Newark | Disc Igbt Npt-Standard/Tube |Littelfuse IXDH20N120 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now |
Part Details for IXDH20N120
IXDH20N120 CAD Models
IXDH20N120 Part Data Attributes:
|
|
IXDH20N120
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXDH20N120
Littelfuse Inc
Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 38 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 570 ns | |
| Turn-on Time-Nom (ton) | 175 ns |
Alternate Parts for IXDH20N120
This table gives cross-reference parts and alternative options found for IXDH20N120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXDH20N120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT35GN120SG | Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | IXDH20N120 vs APT35GN120SG |
| IRGBC40U | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IXDH20N120 vs IRGBC40U |
| HGTP12N60D1 | Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | IXDH20N120 vs HGTP12N60D1 |
| HGTG30N60C3 | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | IXDH20N120 vs HGTG30N60C3 |
| IRGBC40K | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IXDH20N120 vs IRGBC40K |
| HGT1S12N60B3 | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 | Harris Semiconductor | IXDH20N120 vs HGT1S12N60B3 |
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXDH20N120 vs SGP13N60UF |
| 1MB20D-060 | Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fuji Electric Co Ltd | IXDH20N120 vs 1MB20D-060 |
| IRG4BC20UPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IXDH20N120 vs IRG4BC20UPBF |
| GT50J121 | TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-21F2C-3, Insulated Gate BIP Transistor | Toshiba America Electronic Components | IXDH20N120 vs GT50J121 |