Part Details for IXDH30N120D1 by IXYS Corporation
Overview of IXDH30N120D1 by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXDH30N120D1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
71AH4533
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Newark | Igbt, Single, 1.2Kv, 60A, To-247Ad-3 Rohs Compliant: Yes |Ixys Semiconductor IXDH30N120D1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$8.6500 / $11.1400 | Buy Now |
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Bristol Electronics | 10 |
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RFQ | ||
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DISTI #
IXDH30N120D1
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TME | Transistor: IGBT, NPT, 1.2kV, 38A, 300W, TO247-3 Min Qty: 1 | 0 |
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$6.8000 / $9.8600 | RFQ |
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DISTI #
3438368
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element14 Asia-Pacific | IGBT, SINGLE, 1.2KV, 60A, TO-247AD-3 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$8.0554 / $11.7909 | Buy Now |
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DISTI #
3438368
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Farnell | IGBT, SINGLE, 1.2KV, 60A, TO-247AD-3 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each | 0 |
|
$8.5314 / $12.2451 | Buy Now |
Part Details for IXDH30N120D1
IXDH30N120D1 CAD Models
IXDH30N120D1 Part Data Attributes:
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IXDH30N120D1
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXDH30N120D1
IXYS Corporation
Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247AD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW SWITCHING LOSSES | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 435 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 570 ns | |
| Turn-on Time-Nom (ton) | 170 ns |
Alternate Parts for IXDH30N120D1
This table gives cross-reference parts and alternative options found for IXDH30N120D1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXDH30N120D1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXGP20N120 | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXDH30N120D1 vs IXGP20N120 |
| IXDH35N60BD1 | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXDH30N120D1 vs IXDH35N60BD1 |
| IXGP2N100A | Insulated Gate Bipolar Transistor, 4A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXDH30N120D1 vs IXGP2N100A |
| IXGP4N100 | Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXDH30N120D1 vs IXGP4N100 |
| IXGA20N120 | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, TO-263AA, 3 PIN | IXYS Corporation | IXDH30N120D1 vs IXGA20N120 |
| IXGH56N60A3 | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IXDH30N120D1 vs IXGH56N60A3 |
| IXGH35N120C | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXDH30N120D1 vs IXGH35N120C |
| IXGH25N100AU1 | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXDH30N120D1 vs IXGH25N100AU1 |
| IXGH12N100U1 | Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXDH30N120D1 vs IXGH12N100U1 |
| IXGH12N90C | Insulated Gate Bipolar Transistor, 24A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IXDH30N120D1 vs IXGH12N90C |