Part Details for IXFA16N50P3 by IXYS Corporation
Overview of IXFA16N50P3 by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFA16N50P3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFA16N50P3-ND
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DigiKey | MOSFET N-CH 500V 16A TO263 Min Qty: 300 Lead time: 44 Weeks Container: Tube | Temporarily Out of Stock |
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$3.4003 | Buy Now |
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DISTI #
747-IXFA16N50P3
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Mouser Electronics | MOSFET Polar3 HiPerFET Power MOSFET RoHS: Compliant | 0 |
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$3.1900 / $3.3900 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
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$2.9000 | Buy Now |
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DISTI #
IXFA16N50P3
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TTI | MOSFET Polar3 HiPerFET Power MOSFET Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$2.6400 / $3.3600 | Buy Now |
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DISTI #
IXFA16N50P3
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TME | Transistor: N-MOSFET, Polar3™, unipolar, 500V, 16A, 330W, TO263 Min Qty: 1 | 34 |
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$3.0700 / $4.3000 | Buy Now |
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Perfect Parts Corporation | 112 |
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RFQ |
Part Details for IXFA16N50P3
IXFA16N50P3 CAD Models
IXFA16N50P3 Part Data Attributes
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IXFA16N50P3
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFA16N50P3
IXYS Corporation
Power Field-Effect Transistor, 16A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC PACKAGE-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.36 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 330 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFA16N50P3
This table gives cross-reference parts and alternative options found for IXFA16N50P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFA16N50P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTH450P2 | Power Field-Effect Transistor, | Littelfuse Inc | IXFA16N50P3 vs IXTH450P2 |
| APT5030AVR | 14.7A, 500V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, TO-3, 2 PIN | Microsemi Corporation | IXFA16N50P3 vs APT5030AVR |
| IXTQ450P2 | Power Field-Effect Transistor, 16A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXYS Corporation | IXFA16N50P3 vs IXTQ450P2 |
| IXFP16N50P3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFA16N50P3 vs IXFP16N50P3 |
| R5016FNJTL | Power Field-Effect Transistor, 16A I(D), 500V, 0.325ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, 3/2 PIN | ROHM Semiconductor | IXFA16N50P3 vs R5016FNJTL |
| IXTQ450P2 | Power Field-Effect Transistor, | Littelfuse Inc | IXFA16N50P3 vs IXTQ450P2 |
| IXTH450P2 | Power Field-Effect Transistor, 16A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | IXFA16N50P3 vs IXTH450P2 |
| IXFP16N50P3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXYS Corporation | IXFA16N50P3 vs IXFP16N50P3 |
| IXTP450P2 | Power Field-Effect Transistor, | Littelfuse Inc | IXFA16N50P3 vs IXTP450P2 |
| APT5030AVR | Power Field-Effect Transistor, 14.7A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN | Advanced Power Technology | IXFA16N50P3 vs APT5030AVR |