Part Details for IXFA4N100Q by Littelfuse Inc
Overview of IXFA4N100Q by Littelfuse Inc
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXFA4N100Q
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AK0418
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Newark | Mosfet, 4A, 1Kv, 150W, To-263Aa Rohs Compliant: Yes |Littelfuse IXFA4N100Q RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$4.7600 / $8.6600 | Buy Now |
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DISTI #
03AH0464
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Newark | Discmsft Nch Hiperfet-Q Class To-263D2/Tube |Littelfuse IXFA4N100Q RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$6.1100 | Buy Now |
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DISTI #
IXFA4N100Q-ND
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DigiKey | MOSFET N-CH 1000V 4A TO263 Min Qty: 1 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$4.6988 / $8.8400 | Buy Now |
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DISTI #
63369016
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Verical | Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK Min Qty: 300 Package Multiple: 300 Date Code: 2230 | Americas - 300 |
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$4.9405 | Buy Now |
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DISTI #
C1S425201850438
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Chip1Stop | DiscMSFT NCh HiPerFET-Q Class TO-263D2 | 50 |
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$5.5700 | Buy Now |
Part Details for IXFA4N100Q
IXFA4N100Q CAD Models
IXFA4N100Q Part Data Attributes
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IXFA4N100Q
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFA4N100Q
Littelfuse Inc
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFA4N100Q
This table gives cross-reference parts and alternative options found for IXFA4N100Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFA4N100Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFT4N100Q | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFA4N100Q vs IXFT4N100Q |
| IXFP4N100P | Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXFA4N100Q vs IXFP4N100P |
| IXFT4N100Q | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IXFA4N100Q vs IXFT4N100Q |
| IXFA4N100P | Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXFA4N100Q vs IXFA4N100P |
| APT1003RSFLLG/TR | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFA4N100Q vs APT1003RSFLLG/TR |
| APT1003RBLLG | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | IXFA4N100Q vs APT1003RBLLG |
| IXFA4N100QSN | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3/2 | IXYS Corporation | IXFA4N100Q vs IXFA4N100QSN |
| APT1003RSFLLG | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFA4N100Q vs APT1003RSFLLG |
| IXFA4N100P-TRL | Power Field-Effect Transistor, | Littelfuse Inc | IXFA4N100Q vs IXFA4N100P-TRL |
| APT1003RKLLG | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Microchip Technology Inc | IXFA4N100Q vs APT1003RKLLG |