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Part Details for IXFA72N30X3 by Littelfuse Inc
Overview of IXFA72N30X3 by Littelfuse Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IXFA72N30X3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH0477
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Newark | Mosfet, N-Ch, 300V, 72A, 150Deg C, 390W, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:72A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXFA72N30X3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 50 |
|
$4.8200 | Buy Now |
|
DISTI #
IXFA72N30X3-ND
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DigiKey | MOSFET N-CH 300V 72A TO263AA Min Qty: 1 Lead time: 32 Weeks Container: Tube |
314 In Stock |
|
$5.5830 / $9.8400 | Buy Now |
|
DISTI #
80897587
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Verical | Trans MOSFET N-CH 300V 72A 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 2412 | Americas - 190 |
|
$5.4080 / $8.0660 | Buy Now |
|
DISTI #
C1S425203509024
|
Chip1Stop | MOSFET RoHS: Compliant | 190 |
|
$6.4270 / $8.0660 | Buy Now |
Part Details for IXFA72N30X3
IXFA72N30X3 CAD Models
IXFA72N30X3 Part Data Attributes
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IXFA72N30X3
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFA72N30X3
Littelfuse Inc
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 72 A | |
| Drain-source On Resistance-Max | 0.019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 390 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |