Part Details for IXFE44N60 by IXYS Corporation
Overview of IXFE44N60 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFE44N60
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFE44N60
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Mouser Electronics | Discrete Semiconductor Modules 41 Amps 600V 0.13 Rds RoHS: Compliant | 0 |
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Part Details for IXFE44N60
IXFE44N60 CAD Models
IXFE44N60 Part Data Attributes:
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IXFE44N60
IXYS Corporation
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Datasheet
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IXFE44N60
IXYS Corporation
Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Package Description | FLANGE MOUNT, R-PUFM-X4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 500 W | |
Pulsed Drain Current-Max (IDM) | 176 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFE44N60
This table gives cross-reference parts and alternative options found for IXFE44N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFE44N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTN79N20 | Power Field-Effect Transistor, 79A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 | IXYS Corporation | IXFE44N60 vs IXTN79N20 |
IXFE44N50Q | Power Field-Effect Transistor, 39A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXFE44N60 vs IXFE44N50Q |
APT5012JNU3 | 43A, 1000V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET | Microsemi Corporation | IXFE44N60 vs APT5012JNU3 |
IXFN64N50PD3 | Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFE44N60 vs IXFN64N50PD3 |
BUK417-500BE | TRANSISTOR 28 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IXFE44N60 vs BUK417-500BE |
APT6018JN | Power Field-Effect Transistor, 35A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFE44N60 vs APT6018JN |
APT50M60JNF | 71A, 500V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET | Microsemi Corporation | IXFE44N60 vs APT50M60JNF |
IXFN36N60 | Power Field-Effect Transistor, 36A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 | IXYS Corporation | IXFE44N60 vs IXFN36N60 |
IXFN48N50 | Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFE44N60 vs IXFN48N50 |
IXFN32N60 | Power Field-Effect Transistor, 32A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 | Littelfuse Inc | IXFE44N60 vs IXFN32N60 |