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Part Details for IXFH110N10P by Littelfuse Inc
Overview of IXFH110N10P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXFH110N10P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFH110N10P-ND
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DigiKey | MOSFET N-CH 100V 110A TO247AD Min Qty: 30 Lead time: 44 Weeks Container: Tube | Temporarily Out of Stock |
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$4.2634 / $6.0003 | Buy Now |
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Future Electronics | MOSFET DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 44 Weeks Container: Tube | 0Tube |
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$4.6500 / $5.1200 | Buy Now |
Part Details for IXFH110N10P
IXFH110N10P CAD Models
IXFH110N10P Part Data Attributes
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IXFH110N10P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH110N10P
Littelfuse Inc
Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 110 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 250 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH110N10P
This table gives cross-reference parts and alternative options found for IXFH110N10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH110N10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTQ110N10P | Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | IXFH110N10P vs IXTQ110N10P |
| IXTT110N10P | Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFH110N10P vs IXTT110N10P |
| IXTQ110N10P | Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXFH110N10P vs IXTQ110N10P |
| IXFV110N10PS | Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXYS Corporation | IXFH110N10P vs IXFV110N10PS |
| IXFV110N10P | Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN | IXYS Corporation | IXFH110N10P vs IXFV110N10P |
| IXTT110N10P | Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFH110N10P vs IXTT110N10P |