Part Details for IXFH12N80P by Littelfuse Inc
Overview of IXFH12N80P by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFH12N80P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH9897
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Newark | Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFH12N80P Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.6500 / $4.8800 | Buy Now |
Part Details for IXFH12N80P
IXFH12N80P CAD Models
IXFH12N80P Part Data Attributes:
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IXFH12N80P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH12N80P
Littelfuse Inc
Power Field-Effect Transistor, 12A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 800 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH12N80P
This table gives cross-reference parts and alternative options found for IXFH12N80P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH12N80P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFA12N80P | Power Field-Effect Transistor, 12A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFH12N80P vs IXFA12N80P |
| APT8065BVFRG | Power Field-Effect Transistor, 13A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | IXFH12N80P vs APT8065BVFRG |
| APT8065BVRG | Power Field-Effect Transistor, 13A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | IXFH12N80P vs APT8065BVRG |
| IXFP12N80P | Power Field-Effect Transistor, 12A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFH12N80P vs IXFP12N80P |
| APT12M80S | Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3 | Microsemi Corporation | IXFH12N80P vs APT12M80S |
| SHD2395FS | Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN | Sensitron Semiconductors | IXFH12N80P vs SHD2395FS |
| APT8075SN | Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Advanced Power Technology | IXFH12N80P vs APT8075SN |
| APT8075SN | 13A, 800V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 | Microsemi Corporation | IXFH12N80P vs APT8075SN |
| IXFQ12N80P | Power Field-Effect Transistor, 12A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXFH12N80P vs IXFQ12N80P |
| APT8065SVR | Power Field-Effect Transistor, 13A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Microsemi Corporation | IXFH12N80P vs APT8065SVR |