Part Details for IXFH18N60P by IXYS Corporation
Overview of IXFH18N60P by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Price & Stock for IXFH18N60P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXFH18N60P-ND
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DigiKey | MOSFET N-CH 600V 18A TO247AD Min Qty: 1 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$3.2530 / $6.1200 | Buy Now |
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DISTI #
747-IXFH18N60P
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Mouser Electronics | MOSFET 600V 18A RoHS: Compliant | 2806 |
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$3.3600 / $6.1300 | Buy Now |
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Future Electronics | N-Channel 600 V 18 A 400 mΩ PolarHV hiPerFET Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$3.2700 / $3.6000 | Buy Now |
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DISTI #
IXFH18N60P
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TTI | MOSFET 600V 18A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$3.2500 / $3.5800 | Buy Now |
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DISTI #
IXFH18N60P
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TME | Transistor: N-MOSFET, unipolar, 600V, 18A, 360W, TO247-3 Min Qty: 1 | 300 |
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$4.0300 / $5.6400 | Buy Now |
Part Details for IXFH18N60P
IXFH18N60P CAD Models
IXFH18N60P Part Data Attributes
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IXFH18N60P
IXYS Corporation
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Datasheet
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Compare Parts:
IXFH18N60P
IXYS Corporation
Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247AD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH18N60P
This table gives cross-reference parts and alternative options found for IXFH18N60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH18N60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTQ18N60P | Power Field-Effect Transistor, 18A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXFH18N60P vs IXTQ18N60P |
| IXTT18N60P | Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFH18N60P vs IXTT18N60P |
| IXTT18N60P | Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFH18N60P vs IXTT18N60P |
| IXFV18N60P | Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN | IXYS Corporation | IXFH18N60P vs IXFV18N60P |
| IXTV18N60PS | Power Field-Effect Transistor, 18A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXYS Corporation | IXFH18N60P vs IXTV18N60PS |
| IXFV18N60PS | Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXYS Corporation | IXFH18N60P vs IXFV18N60PS |