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Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFH26N50P-ND
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DigiKey | MOSFET N-CH 500V 26A TO247AD Min Qty: 1 Lead time: 44 Weeks Container: Tube |
614 In Stock |
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$4.0759 / $9.0900 | Buy Now |
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Future Electronics | MOSFET DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 44 Weeks Container: Tube | 0Tube |
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$4.8500 / $5.3300 | Buy Now |
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IXFH26N50P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH26N50P
Littelfuse Inc
Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 26 A | |
Drain-source On Resistance-Max | 0.23 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 78 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXFH26N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH26N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2SK1549R | Power Field-Effect Transistor, 20A I(D), 250V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fuji Electric Co Ltd | IXFH26N50P vs 2SK1549R |
2SK2108 | Power Field-Effect Transistor, 6A I(D), 250V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN | SANYO Electric Co Ltd | IXFH26N50P vs 2SK2108 |
2SK2142 | 12A, 250V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | onsemi | IXFH26N50P vs 2SK2142 |
2SK3468-01 | Power Field-Effect Transistor, 14A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | IXFH26N50P vs 2SK3468-01 |
2SK3415LS | Power Field-Effect Transistor, 40A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Electric Co Ltd | IXFH26N50P vs 2SK3415LS |
APT5020BVFRG | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Microsemi Corporation | IXFH26N50P vs APT5020BVFRG |
2SK3823 | Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SANYO Semiconductor Co Ltd | IXFH26N50P vs 2SK3823 |
2SK4191LS | Power Field-Effect Transistor, 4.8A I(D), 400V, 1.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN | SANYO Electric Co Ltd | IXFH26N50P vs 2SK4191LS |
2SK890 | TRANSISTOR 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | Toshiba America Electronic Components | IXFH26N50P vs 2SK890 |
2SK2678LS | Power Field-Effect Transistor, 1.5A I(D), 600V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FI, 3 PIN | SANYO Electric Co Ltd | IXFH26N50P vs 2SK2678LS |