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Part Details for IXFH30N50Q3 by Littelfuse Inc
Overview of IXFH30N50Q3 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFH30N50Q3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH0573
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Newark | Discmsft Nchhiperfet-Q3 Class To-247Ad/Tube |Littelfuse IXFH30N50Q3 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$10.3100 | Buy Now |
|
DISTI #
IXFH30N50Q3-ND
|
DigiKey | MOSFET N-CH 500V 30A TO247AD Min Qty: 1 Lead time: 26 Weeks Container: Tube |
367 In Stock |
|
$8.2668 / $13.0500 | Buy Now |
Part Details for IXFH30N50Q3
IXFH30N50Q3 CAD Models
IXFH30N50Q3 Part Data Attributes
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IXFH30N50Q3
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH30N50Q3
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | TO-247, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 43 pF | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 690 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH30N50Q3
This table gives cross-reference parts and alternative options found for IXFH30N50Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH30N50Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK4199LS | TRANSISTOR 3 A, 650 V, 3.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FI-LS, 3 PIN, FET General Purpose Power | onsemi | IXFH30N50Q3 vs 2SK4199LS |
| APT5020BVFRG | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | IXFH30N50Q3 vs APT5020BVFRG |
| 2SK3823 | Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SANYO Semiconductor Co Ltd | IXFH30N50Q3 vs 2SK3823 |
| APT5020BVFRG | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Microsemi Corporation | IXFH30N50Q3 vs APT5020BVFRG |
| APT5020BVR | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Microsemi Corporation | IXFH30N50Q3 vs APT5020BVR |
| 2SK3527-01 | Power Field-Effect Transistor, 21A I(D), 600V, 0.37ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Fuji Electric Co Ltd | IXFH30N50Q3 vs 2SK3527-01 |
| IXFT36N50P | Power Field-Effect Transistor, 36A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFH30N50Q3 vs IXFT36N50P |
| 2SK3316 | TRANSISTOR 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | IXFH30N50Q3 vs 2SK3316 |
| 2SK1395 | Power Field-Effect Transistor, 20A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | IXFH30N50Q3 vs 2SK1395 |
| 2SK2198 | Power Field-Effect Transistor, 30A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3L, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | IXFH30N50Q3 vs 2SK2198 |