Part Details for IXFH320N10T2 by IXYS Corporation
Overview of IXFH320N10T2 by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFH320N10T2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
71AH4546
|
Newark | Mosfet, N-Ch, 100V, 320A, To-247 Rohs Compliant: Yes |Ixys Semiconductor IXFH320N10T2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 20 |
|
$12.2600 / $16.0900 | Buy Now |
|
DISTI #
747-IXFH320N10T2
|
Mouser Electronics | MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 320A RoHS: Compliant | 1527 |
|
$10.6800 / $15.4700 | Buy Now |
|
|
Quest Components | 198 |
|
$17.2176 / $21.5220 | Buy Now | |
|
DISTI #
IXFH320N10T2
|
TTI | MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 320A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
|
$9.8000 / $11.4300 | Buy Now |
|
DISTI #
IXFH320N10T2
|
TME | Transistor: N-MOSFET, unipolar, 100V, 320A, 1000W, TO247-3, 98ns Min Qty: 1 | 0 |
|
$10.3700 / $14.5900 | RFQ |
|
|
New Advantage Corporation | MOSFET DIS.320A 100V N-CH TO247-3 TRENCHT2 THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 8806 |
|
$12.8300 / $13.7500 | Buy Now |
Part Details for IXFH320N10T2
IXFH320N10T2 CAD Models
IXFH320N10T2 Part Data Attributes
|
|
IXFH320N10T2
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXFH320N10T2
IXYS Corporation
Power Field-Effect Transistor, 320A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 320 A | |
| Drain-source On Resistance-Max | 0.0035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1000 W | |
| Pulsed Drain Current-Max (IDM) | 800 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH320N10T2
This table gives cross-reference parts and alternative options found for IXFH320N10T2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH320N10T2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFT320N10T2 | Power Field-Effect Transistor, 320A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IXFH320N10T2 vs IXFT320N10T2 |
| IXFH320N10T2 | Power Field-Effect Transistor, | Littelfuse Inc | IXFH320N10T2 vs IXFH320N10T2 |
| IXFT320N10T2 | Power Field-Effect Transistor, | Littelfuse Inc | IXFH320N10T2 vs IXFT320N10T2 |