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Power Field-Effect Transistor, 48A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
27AK2227
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Newark | Discrete Mosfet 48A 600V X3 To247/ Tube Rohs Compliant: Yes |Littelfuse IXFH48N60X3 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$5.5600 / $5.9800 | Buy Now |
DISTI #
3996600
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element14 Asia-Pacific | MOSFET, N-CH, 600V, 48A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$6.8325 / $9.9589 | Buy Now |
DISTI #
3996600
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Farnell | MOSFET, N-CH, 600V, 48A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 0 |
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$6.9183 / $9.8780 | Buy Now |
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Ozdisan Elektronik | MOSFET DIS.48A 600V N-CH TO247 X3 THT | 0 |
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$11.1014 / $11.8785 | RFQ |
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IXFH48N60X3
Littelfuse Inc
Buy Now
Datasheet
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IXFH48N60X3
Littelfuse Inc
Power Field-Effect Transistor, 48A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | unknown | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1400 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 48 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 18 pF | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 520 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |