Datasheets
IXFH50N30Q3 by:

Power Field-Effect Transistor, 50A I(D), 300V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

Part Details for IXFH50N30Q3 by IXYS Corporation

Overview of IXFH50N30Q3 by IXYS Corporation

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IXFH50N30Q3

Part # Distributor Description Stock Price Buy
DISTI # 747-IXFH50N30Q3
Mouser Electronics MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/50A RoHS: Compliant 385
  • 1 $13.0500
  • 10 $11.5200
  • 30 $10.5600
  • 120 $9.3800
  • 270 $9.0400
  • 510 $8.9900
$8.9900 / $13.0500 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 26 Weeks Container: Tube 0
Tube
  • 30 $9.0100
$9.0100 Buy Now
DISTI # IXFH50N30Q3
TTI MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/50A Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $8.9500
  • 510 $8.7700
  • 1,020 $8.1700
$8.1700 / $8.9500 Buy Now
DISTI # IXFH50N30Q3
TME Transistor: N-MOSFET, unipolar, 300V, 50A, 690W, TO247-3, 250ns Min Qty: 1 16
  • 1 $14.0400
  • 3 $12.5900
  • 10 $11.0100
  • 30 $9.9500
$9.9500 / $14.0400 Buy Now
New Advantage Corporation MOSFET DIS.50A 300V N-CH TO247AD HIPERFET THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 213
  • 100 $20.1000
  • 213 $18.7600
$18.7600 / $20.1000 Buy Now

Part Details for IXFH50N30Q3

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IXFH50N30Q3 Part Data Attributes

IXFH50N30Q3 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFH50N30Q3 IXYS Corporation Power Field-Effect Transistor, 50A I(D), 300V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-247
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 690 W
Pulsed Drain Current-Max (IDM) 150 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFH50N30Q3

This table gives cross-reference parts and alternative options found for IXFH50N30Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH50N30Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFT50N30Q3 Power Field-Effect Transistor, Littelfuse Inc IXFH50N30Q3 vs IXFT50N30Q3
IXFH50N30Q3 Power Field-Effect Transistor, Littelfuse Inc IXFH50N30Q3 vs IXFH50N30Q3
IXFT50N30Q3 Power Field-Effect Transistor, 50A I(D), 300V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXYS Corporation IXFH50N30Q3 vs IXFT50N30Q3

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