Part Details for IXFH50N30Q3 by IXYS Corporation
Overview of IXFH50N30Q3 by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFH50N30Q3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFH50N30Q3
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Mouser Electronics | MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/50A RoHS: Compliant | 385 |
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$8.9900 / $13.0500 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 26 Weeks Container: Tube | 0Tube |
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$9.0100 | Buy Now |
DISTI #
IXFH50N30Q3
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TTI | MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/50A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$8.1700 / $8.9500 | Buy Now |
DISTI #
IXFH50N30Q3
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TME | Transistor: N-MOSFET, unipolar, 300V, 50A, 690W, TO247-3, 250ns Min Qty: 1 | 16 |
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$9.9500 / $14.0400 | Buy Now |
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New Advantage Corporation | MOSFET DIS.50A 300V N-CH TO247AD HIPERFET THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 213 |
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$18.7600 / $20.1000 | Buy Now |
Part Details for IXFH50N30Q3
IXFH50N30Q3 CAD Models
IXFH50N30Q3 Part Data Attributes
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IXFH50N30Q3
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFH50N30Q3
IXYS Corporation
Power Field-Effect Transistor, 50A I(D), 300V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-247 | |
Package Description | PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 690 W | |
Pulsed Drain Current-Max (IDM) | 150 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFH50N30Q3
This table gives cross-reference parts and alternative options found for IXFH50N30Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH50N30Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXFT50N30Q3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFH50N30Q3 vs IXFT50N30Q3 |
IXFH50N30Q3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFH50N30Q3 vs IXFH50N30Q3 |
IXFT50N30Q3 | Power Field-Effect Transistor, 50A I(D), 300V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IXFH50N30Q3 vs IXFT50N30Q3 |