Part Details for IXFH50N60P3 by Littelfuse Inc
Overview of IXFH50N60P3 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for IXFH50N60P3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFH50N60P3-ND
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DigiKey | MOSFET N-CH 600V 50A TO247AD Min Qty: 1 Lead time: 44 Weeks Container: Tube |
613 In Stock |
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$5.9900 / $11.4300 | Buy Now |
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Future Electronics | MOSFET DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 44 Weeks Container: Tube | 0Tube |
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$6.2700 / $6.4300 | Buy Now |
Part Details for IXFH50N60P3
IXFH50N60P3 CAD Models
IXFH50N60P3 Part Data Attributes
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IXFH50N60P3
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH50N60P3
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2.5 pF | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1040 W | |
| Pulsed Drain Current-Max (IDM) | 125 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH50N60P3
This table gives cross-reference parts and alternative options found for IXFH50N60P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH50N60P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFH50N60P3 | Power Field-Effect Transistor, 50A I(D), 600V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXFH50N60P3 vs IXFH50N60P3 |