-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 78A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
51AK0714
|
Newark | Mosfet, N-Ch, 600V, 78A, To-247 Rohs Compliant: Yes |Littelfuse IXFH78N60X3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$9.5100 / $13.7700 | Buy Now |
DISTI #
3996603
|
element14 Asia-Pacific | MOSFET, N-CH, 600V, 78A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$9.9589 / $13.2100 | Buy Now |
DISTI #
3996603
|
Farnell | MOSFET, N-CH, 600V, 78A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 0 |
|
$9.7781 / $13.0999 | Buy Now |
|
Ozdisan Elektronik | MOSFET DIS.78A 600V N-CH TO247 X3 THT | 0 |
|
$15.2073 / $16.2718 | RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IXFH78N60X3
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXFH78N60X3
Littelfuse Inc
Power Field-Effect Transistor, 78A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD,
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | unknown | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2200 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 78 A | |
Drain-source On Resistance-Max | 0.038 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 36 pF | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 780 W | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |