Part Details for IXFH80N65X2 by IXYS Corporation
Results Overview of IXFH80N65X2 by IXYS Corporation
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
IXFH80N65X2 Information
IXFH80N65X2 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFH80N65X2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
2674750
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Farnell | MOSFET, N-CH, 650V, 80A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 42 Weeks, 1 Days Container: Each | 3 |
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$8.9658 / $14.0946 | Buy Now |
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Bristol Electronics | 30 |
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RFQ | ||
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DISTI #
IXFH80N65X2
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TME | Transistor: N-MOSFET, X2-Class, unipolar, 650V, 80A, 890W, TO247-3 Min Qty: 1 | 55 |
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$10.7700 / $15.0800 | Buy Now |
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Chip 1 Exchange | INSTOCK | 16842 |
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RFQ | |
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LCSC | 650V 80A 38m10V80A 890W 3.5V 1 N-channel TO-247-3 MOSFETs ROHS | 90 |
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$6.0244 / $9.5912 | Buy Now |
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New Advantage Corporation | MOSFET DIS.80A 650V N-CH TO-247AD ULTRA JUNCTION RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 10299 |
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$10.6000 / $11.3600 | Buy Now |
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Vyrian | Transistors | 852 |
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RFQ |
Part Details for IXFH80N65X2
IXFH80N65X2 CAD Models
IXFH80N65X2 Part Data Attributes
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IXFH80N65X2
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFH80N65X2
IXYS Corporation
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.6 pF | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 890 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH80N65X2
This table gives cross-reference parts and alternative options found for IXFH80N65X2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH80N65X2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIHG73N60E-E3 | Vishay Siliconix | Check for Price | TRANSISTOR POWER, FET, FET General Purpose Power | IXFH80N65X2 vs SIHG73N60E-E3 |
| APT77N60BC6 | Microchip Technology Inc | $13.4773 | Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | IXFH80N65X2 vs APT77N60BC6 |
| IXFH80N65X2 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IXFH80N65X2 vs IXFH80N65X2 |
| IPW60R037P7 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IXFH80N65X2 vs IPW60R037P7 |