Datasheets
IXFK180N25T by:

Power Field-Effect Transistor,

Part Details for IXFK180N25T by Littelfuse Inc

Overview of IXFK180N25T by Littelfuse Inc

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for IXFK180N25T

Part # Distributor Description Stock Price Buy
DISTI # 03AH0645
Newark Mosfet, N-Ch, 250V, 180A, To-264, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:180A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Littelfuse IXFK180N25T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 300
  • 1 $19.9000
  • 5 $17.0800
  • 10 $14.2600
  • 25 $12.7300
  • 100 $11.2000
$11.2000 / $19.9000 Buy Now
DISTI # IXFK180N25T-ND
DigiKey MOSFET N-CH 250V 180A TO264AA Min Qty: 1 Lead time: 27 Weeks Container: Tube 157
In Stock
  • 1 $20.3100
  • 10 $14.5490
  • 100 $11.4274
$11.4274 / $20.3100 Buy Now
DISTI # 83646173
Verical Trans MOSFET N-CH 250V 180A 3-Pin(3+Tab) TO-264 Min Qty: 1 Package Multiple: 1 Date Code: 2304 Americas - 25
  • 1 $18.4260
  • 10 $14.1700
  • 100 $11.3040
$11.3040 / $18.4260 Buy Now
DISTI # 66432325
Verical Trans MOSFET N-CH 250V 180A 3-Pin(3+Tab) TO-264 Min Qty: 1 Package Multiple: 1 Date Code: 2304 Americas - 7
  • 1 $14.7620
  • 10 $12.5380
  • 100 $11.1590
$11.1590 / $14.7620 Buy Now
DISTI # C1S425203522663
Chip1Stop MOSFET RoHS: Compliant 25
  • 1 $18.4260
  • 10 $14.1700
$14.1700 / $18.4260 Buy Now
DISTI # C1S425201339874
Chip1Stop DiscMSFT NChTrenchGate-Gen1 TO-264(3) RoHS: Compliant 7
  • 1 $14.7620
$14.7620 Buy Now

Part Details for IXFK180N25T

IXFK180N25T CAD Models

IXFK180N25T Part Data Attributes

IXFK180N25T Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXFK180N25T Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 5000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0129 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 47 pF
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1390 W
Pulsed Drain Current-Max (IDM) 500 A
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFK180N25T

This table gives cross-reference parts and alternative options found for IXFK180N25T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK180N25T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFX180N25T Power Field-Effect Transistor, Littelfuse Inc IXFK180N25T vs IXFX180N25T

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