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Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0659
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Newark | Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFK26N120P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$25.7500 | Buy Now |
DISTI #
IXFK26N120P-ND
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DigiKey | MOSFET N-CH 1200V 26A TO264AA Min Qty: 1 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
|
$24.5669 / $36.8800 | Buy Now |
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IXFK26N120P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFK26N120P
Littelfuse Inc
Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 26 A | |
Drain-source On Resistance-Max | 0.46 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-264AA | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 960 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXFK26N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK26N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXFX26N120P | Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXYS Corporation | IXFK26N120P vs IXFX26N120P |
APT26F120B2 | Power Field-Effect Transistor, 27A I(D), 1200V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFK26N120P vs APT26F120B2 |
APT22F120L | Power Field-Effect Transistor, 23A I(D), 1200V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | IXFK26N120P vs APT22F120L |
APT28M120B2 | Power Field-Effect Transistor, 29A I(D), 1200V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFK26N120P vs APT28M120B2 |
APT26F120L | Power Field-Effect Transistor, 22A I(D), 1200V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, T-MAX, 3 PIN | Microsemi Corporation | IXFK26N120P vs APT26F120L |
IXFX26N120P | Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | Littelfuse Inc | IXFK26N120P vs IXFX26N120P |