Datasheets
IXFK48N60P by:

Power Field-Effect Transistor, 48A I(D), 600V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

Part Details for IXFK48N60P by IXYS Corporation

Overview of IXFK48N60P by IXYS Corporation

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Price & Stock for IXFK48N60P

Part # Distributor Description Stock Price Buy
DISTI # IXFK48N60P-ND
DigiKey MOSFET N-CH 600V 48A TO264AA Min Qty: 1 Lead time: 46 Weeks Container: Tube Temporarily Out of Stock
  • 1 $18.9500
  • 25 $15.3388
  • 100 $14.4364
  • 500 $13.0830
$13.0830 / $18.9500 Buy Now
DISTI # 747-IXFK48N60P
Mouser Electronics MOSFET 600V 48A RoHS: Compliant 0
  • 300 $13.9800
  • 500 $13.0800
$13.0800 / $13.9800 Order Now
Future Electronics Single N-Channel 600 V 830 W 150 nC Through Hole Power Mosfet - TO-264 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 25 Container: Tube 0
Tube
  • 25 $13.0100
  • 50 $12.9400
  • 100 $12.8700
  • 125 $12.8500
  • 375 $12.7100
$12.7100 / $13.0100 Buy Now
DISTI # IXFK48N60P
TTI MOSFET 600V 48A Min Qty: 300 Package Multiple: 25 Container: Tube Americas - 0
  • 300 $12.9600
  • 500 $12.7100
  • 1,000 $11.7900
$11.7900 / $12.9600 Buy Now
DISTI # IXFK48N60P
TME Transistor: N-MOSFET, unipolar, 600V, 48A, 830W, TO264 Min Qty: 300 3
  • 300 $12.5700
$12.5700 Buy Now
DISTI # 1427312
Farnell MOSFET, N, TO-264 RoHS: Compliant Min Qty: 300 Lead time: 40 Weeks, 1 Days Container: Each 113
  • 300 $12.7003
$12.7003 Buy Now

Part Details for IXFK48N60P

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IXFK48N60P Part Data Attributes

IXFK48N60P IXYS Corporation
Buy Now Datasheet
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IXFK48N60P IXYS Corporation Power Field-Effect Transistor, 48A I(D), 600V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-264AA
Package Description TO-264, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 48 A
Drain-source On Resistance-Max 0.135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFK48N60P

This table gives cross-reference parts and alternative options found for IXFK48N60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK48N60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFK48N60Q3 Power Field-Effect Transistor, Littelfuse Inc IXFK48N60P vs IXFK48N60Q3
Part Number Description Manufacturer Compare
IXFN20N120 Power Field-Effect Transistor, 20A I(D), 1200V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation IXFK48N60P vs IXFN20N120
IXFK48N60Q3 Power Field-Effect Transistor, Littelfuse Inc IXFK48N60P vs IXFK48N60Q3
APT11058JFLL Power Field-Effect Transistor, 18A I(D), 1100V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology IXFK48N60P vs APT11058JFLL

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