Datasheets
IXFK80N50P by:

Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

Part Details for IXFK80N50P by Littelfuse Inc

Overview of IXFK80N50P by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXFK80N50P

Part # Distributor Description Stock Price Buy
DISTI # 03AH0693
Newark Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFK80N50P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $15.4600
  • 500 $14.3600
$14.3600 / $15.4600 Buy Now
DISTI # IXFK80N50P-ND
DigiKey MOSFET N-CH 500V 80A TO264AA Min Qty: 1 Lead time: 44 Weeks Container: Tube Temporarily Out of Stock
  • 1 $23.1800
  • 25 $16.7004
  • 100 $14.7617
$14.7617 / $23.1800 Buy Now

Part Details for IXFK80N50P

IXFK80N50P CAD Models

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IXFK80N50P Part Data Attributes

IXFK80N50P Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXFK80N50P Littelfuse Inc Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFK80N50P

This table gives cross-reference parts and alternative options found for IXFK80N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK80N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFK80N50Q3 Power Field-Effect Transistor, Littelfuse Inc IXFK80N50P vs IXFK80N50Q3
IXFK80N50Q3 Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN IXYS Corporation IXFK80N50P vs IXFK80N50Q3
Part Number Description Manufacturer Compare
IXFK80N50Q3 Power Field-Effect Transistor, Littelfuse Inc IXFK80N50P vs IXFK80N50Q3
IXFK80N50P Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN IXYS Corporation IXFK80N50P vs IXFK80N50P
IXFX80N50P Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IXYS Corporation IXFK80N50P vs IXFX80N50P
IXFX80N50P Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN Littelfuse Inc IXFK80N50P vs IXFX80N50P
APT81H50L Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT PACKAGE-3 Microsemi Corporation IXFK80N50P vs APT81H50L
APT84F50B2 Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T-MAX-3 Microsemi Corporation IXFK80N50P vs APT84F50B2
APT84M50B2 Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T-MAX, 3 PIN Microsemi Corporation IXFK80N50P vs APT84M50B2
IXFK80N50Q3 Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN IXYS Corporation IXFK80N50P vs IXFK80N50Q3
APT84M50B2 Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFK80N50P vs APT84M50B2
APT84F50L Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN Microsemi Corporation IXFK80N50P vs APT84F50L

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