Part Details for IXFK80N65X2 by IXYS Corporation
Overview of IXFK80N65X2 by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXFK80N65X2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
747-IXFK80N65X2
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Mouser Electronics | MOSFETs 650V/80A Ultra Junction X2-Class RoHS: Compliant | 0 |
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$14.2500 | Order Now |
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Future Electronics | N-Channel 650 V 80 A 38 mOhm SMT X2-Class HiPerFET Power Mosfet - TO-264 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 32 Weeks Container: Bulk | 0Bulk |
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$16.2600 / $17.0800 | Buy Now |
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Future Electronics | N-Channel 650 V 80 A 38 mOhm SMT X2-Class HiPerFET Power Mosfet - TO-264 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 32 Weeks Container: Tube | 0Tube |
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$16.2600 / $16.5900 | Buy Now |
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DISTI #
IXFK80N65X2
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TTI | MOSFETs 650V/80A Ultra Junction X2-Class Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
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$14.2600 | Buy Now |
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DISTI #
IXFK80N65X2
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TME | Transistor: N-MOSFET, unipolar, 650V, 80A, 890W, TO264P, 200ns Min Qty: 1 | 5 |
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$17.1900 / $23.3300 | Buy Now |
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New Advantage Corporation | MOSFET DIS.80A 650V N-CH TO-264 ULTRA JUNCTION RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 24 |
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$34.8700 / $37.3600 | Buy Now |
Part Details for IXFK80N65X2
IXFK80N65X2 CAD Models
IXFK80N65X2 Part Data Attributes
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IXFK80N65X2
IXYS Corporation
Buy Now
Datasheet
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IXFK80N65X2
IXYS Corporation
Power Field-Effect Transistor
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.6 pF | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 890 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |