IXFN300N10P
Description: Power Field-Effect Transistor, 295A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

Overview of IXFN300N10P by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 4 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for IXFN300N10P by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXFN300N10P
Mouser Electronics MOSFET Modules Polar Power MOSFET HiPerFET RoHS: Compliant 2275
  • 1 $46.8400
  • 10 $41.7200
  • 20 $39.2300
  • 50 $38.8700
  • 100 $36.6200
  • 200 $35.3100
$35.3100 / $46.8400 Buy Now
Future Electronics 100V 295A 5.5 mOhm N-ch SOT-227 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Lead time: 44 Weeks Container: Tube 0
Tube
  • 10 $35.2400
  • 20 $35.0100
  • 40 $34.7900
  • 50 $34.7200
  • 150 $34.2800
$34.2800 / $35.2400 Buy Now
DISTI # IXFN300N10P
TTI MOSFET Modules Polar Power MOSFET HiPerFET Min Qty: 300 Package Multiple: 10 Container: Tube Americas - 0
  • 300 $34.2700
$34.2700 Buy Now
DISTI # IXFN300N10P
TME Module, single transistor, 100V, 295A, SOT227B, screw, Idm: 900A Min Qty: 1 0
  • 1 $52.8100
  • 3 $46.6700
  • 10 $41.9800
$41.9800 / $52.8100 RFQ

CAD Models for IXFN300N10P by IXYS Corporation
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Part Data Attributes for IXFN300N10P by IXYS Corporation

IXFN300N10P
IXYS Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Package Description
MINIBLOC-4
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
3000 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
295 A
Drain-source On Resistance-Max
0.0055 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PUFM-X4
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1070 W
Pulsed Drain Current-Max (IDM)
900 A
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Surface Mount
NO
Terminal Finish
NICKEL
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IXFN300N10P
    IXYS Corporation
    Power Field-Effect Transistor, 295A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
    VS

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