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Part Details for IXFN300N20X3 by Littelfuse Inc
Overview of IXFN300N20X3 by Littelfuse Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for IXFN300N20X3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH0742
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Newark | Mosfet Mod, N-Ch, 200V, 300A, 695W, Channel Type:N Channel, Continuous Drain Current Id:300A, Drain Source Voltage Vds:200V, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V, Power Dissipation:695W Rohs Compliant: Yes |Littelfuse IXFN300N20X3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 8 |
|
$30.1900 | Buy Now |
|
DISTI #
29AK0436
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Newark | Mosfet Module, 200V, 300A, 695W Rohs Compliant: Yes |Littelfuse IXFN300N20X3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$37.4800 / $46.2700 | Buy Now |
|
DISTI #
3930137
|
element14 Asia-Pacific | MOSFET MODULE, 200V, 300A, 695W RoHS: Compliant Min Qty: 1 Container: Each | 274 |
|
$38.3588 / $49.0320 | Buy Now |
|
DISTI #
3930137
|
Farnell | MOSFET MODULE, 200V, 300A, 695W RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 274 |
|
$36.6564 / $45.6071 | Buy Now |
Part Details for IXFN300N20X3
IXFN300N20X3 CAD Models
IXFN300N20X3 Part Data Attributes:
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IXFN300N20X3
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFN300N20X3
Littelfuse Inc
Power Field-Effect Transistor,
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 300 A | |
| Drain-source On Resistance-Max | 0.0035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.2 pF | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 695 W | |
| Pulsed Drain Current-Max (IDM) | 700 A | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |