Part Details for IXFN32N120P by IXYS Corporation
Overview of IXFN32N120P by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFN32N120P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFN32N120P-ND
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DigiKey | MOSFET N-CH 1200V 32A SOT-227B Min Qty: 1 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
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$58.4917 / $71.9900 | Buy Now |
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DISTI #
747-IXFN32N120P
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Mouser Electronics | Discrete Semiconductor Modules 32 Amps 1200V RoHS: Compliant | 636 |
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$59.5900 / $73.4300 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube | 0Tube |
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$65.2600 | Buy Now |
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DISTI #
IXFN32N120P
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TTI | Discrete Semiconductor Modules 32 Amps 1200V Min Qty: 300 Package Multiple: 10 Container: Tube | Americas - 0 |
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$58.3600 | Buy Now |
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DISTI #
IXFN32N120P
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TME | Module, single transistor, 1.2kV, 32A, SOT227B, screw, Idm: 100A Min Qty: 1 | 0 |
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$69.1700 / $87.1600 | RFQ |
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New Advantage Corporation | MOSFET MOD.32A 1200V N-CH SOT227B HIPERFET CHASSIS RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 18 |
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$130.6000 / $139.9200 | Buy Now |
Part Details for IXFN32N120P
IXFN32N120P CAD Models
IXFN32N120P Part Data Attributes
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IXFN32N120P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN32N120P
IXYS Corporation
Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | MINIBLOC-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.31 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1000 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN32N120P
This table gives cross-reference parts and alternative options found for IXFN32N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN32N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFN32N120 | Power Field-Effect Transistor, 32A I(D), 1200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN32N120P vs IXFN32N120 |