Part Details for IXFP4N100PM by Littelfuse Inc
Overview of IXFP4N100PM by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXFP4N100PM
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0829
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Newark | Discmosfetn-Ch Hiperfet-Pola To-220Ab/Fp/ Tube |Littelfuse IXFP4N100PM RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.3700 / $4.5100 | Buy Now |
DISTI #
5656-IXFP4N100PM-ND
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DigiKey | MOSFET N-CH 1000V 2.1A TO220 Min Qty: 300 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$4.0904 | Buy Now |
Part Details for IXFP4N100PM
IXFP4N100PM CAD Models
IXFP4N100PM Part Data Attributes
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IXFP4N100PM
Littelfuse Inc
Buy Now
Datasheet
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IXFP4N100PM
Littelfuse Inc
Power Field-Effect Transistor, 2.5A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 3.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 57 W | |
Pulsed Drain Current-Max (IDM) | 8 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |