There are no models available for this part yet.
Overview of IXFQ26N50P3 by IXYS Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFQ26N50P3 by IXYS Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
747-IXFQ26N50P3
|
Mouser Electronics | MOSFETs Polar3 HiPerFET Power MOSFET RoHS: Compliant | 229 |
|
$4.1800 / $6.9800 | Buy Now | |
| Future Electronics | MOSFET DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 44 Weeks Container: Tube | 0Tube |
|
$4.4200 / $4.8600 | Buy Now | ||
|
DISTI #
IXFQ26N50P3
|
TTI | MOSFETs Polar3 HiPerFET Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
|
$4.1400 / $4.6400 | Buy Now | |
|
DISTI #
IXFQ26N50P3
|
TME | Transistor: N-MOSFET, unipolar, 500V, 26A, 500W, TO3P Min Qty: 1 | 0 |
|
$4.2100 / $6.8800 | RFQ |
CAD Models for IXFQ26N50P3 by IXYS Corporation
Part Data Attributes for IXFQ26N50P3 by IXYS Corporation
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
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Ihs Manufacturer
|
IXYS CORP
|
|
Package Description
|
TO-3P, 3 PIN
|
|
Reach Compliance Code
|
compliant
|
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ECCN Code
|
EAR99
|
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
|
300 mJ
|
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Case Connection
|
DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
|
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DS Breakdown Voltage-Min
|
500 V
|
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Drain Current-Max (ID)
|
26 A
|
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Drain-source On Resistance-Max
|
0.25 Ω
|
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
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Feedback Cap-Max (Crss)
|
8 pF
|
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JESD-30 Code
|
R-PSFM-T3
|
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Number of Elements
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1
|
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
|
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Operating Temperature-Min
|
-55 °C
|
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Package Body Material
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PLASTIC/EPOXY
|
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Package Shape
|
RECTANGULAR
|
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Package Style
|
FLANGE MOUNT
|
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Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
500 W
|
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Pulsed Drain Current-Max (IDM)
|
78 A
|
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Surface Mount
|
NO
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Terminal Form
|
THROUGH-HOLE
|
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Terminal Position
|
SINGLE
|
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Transistor Application
|
SWITCHING
|
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Transistor Element Material
|
SILICON
|