Part Details for IXFQ28N60P3 by IXYS Corporation
Overview of IXFQ28N60P3 by IXYS Corporation
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFQ28N60P3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
02AC9819
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Newark | Mosfet, N-Ch, 600V, 28A, To-3P, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:28A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Qualification:-Rohs Compliant: Yes |Ixys Semiconductor IXFQ28N60P3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$4.3200 / $6.8500 | Buy Now |
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DISTI #
IXFQ28N60P3-ND
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DigiKey | MOSFET N-CH 600V 28A TO3P Min Qty: 1 Lead time: 44 Weeks Container: Tube |
273 In Stock |
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$3.5002 / $6.5900 | Buy Now |
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DISTI #
747-IXFQ28N60P3
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Mouser Electronics | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET RoHS: Compliant | 0 |
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$4.0400 / $6.5900 | Order Now |
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Future Electronics | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$3.5200 / $3.8900 | Buy Now |
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Future Electronics | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$3.5200 / $3.8900 | Buy Now |
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DISTI #
IXFQ28N60P3
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TTI | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$3.7400 / $3.9000 | Buy Now |
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DISTI #
IXFQ28N60P3
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TME | Transistor: N-MOSFET, unipolar, 600V, 28A, 695W, TO3P Min Qty: 1 | 0 |
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$4.2700 / $5.9800 | RFQ |
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DISTI #
2674766
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element14 Asia-Pacific | MOSFET, N-CH, 600V, 28A, TO-3P RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$4.4914 / $6.7812 | Buy Now |
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DISTI #
2674766
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Farnell | MOSFET, N-CH, 600V, 28A, TO-3P RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each | 0 |
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$4.4737 / $6.4072 | Buy Now |
Part Details for IXFQ28N60P3
IXFQ28N60P3 CAD Models
IXFQ28N60P3 Part Data Attributes
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IXFQ28N60P3
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFQ28N60P3
IXYS Corporation
Power Field-Effect Transistor, 28A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-3P | |
| Package Description | PLASTIC, TO-3P, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.26 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 695 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFQ28N60P3
This table gives cross-reference parts and alternative options found for IXFQ28N60P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFQ28N60P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFH26N60P | Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXFQ28N60P3 vs IXFH26N60P |
| IXFH28N60P3 | Power Field-Effect Transistor, 28A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | IXFQ28N60P3 vs IXFH28N60P3 |
| IXFH28N60P3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFQ28N60P3 vs IXFH28N60P3 |
| IXFQ28N60P3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFQ28N60P3 vs IXFQ28N60P3 |
| IXFK28N60 | Power Field-Effect Transistor, 28A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | IXFQ28N60P3 vs IXFK28N60 |
| IXTH26N60P | Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IXFQ28N60P3 vs IXTH26N60P |
| IXTQ26N60P | Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | IXFQ28N60P3 vs IXTQ26N60P |
| IXFK28N60 | Power Field-Effect Transistor, 28A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | IXYS Corporation | IXFQ28N60P3 vs IXFK28N60 |
| IXTT26N60P | Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFQ28N60P3 vs IXTT26N60P |