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Power Field-Effect Transistor, 60A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0874
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Newark | Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube |Littelfuse IXFR102N30P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$12.4100 / $13.3500 | Buy Now |
DISTI #
IXFR102N30P-ND
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DigiKey | MOSFET N-CH 300V 60A ISOPLUS247 Min Qty: 300 Lead time: 40 Weeks Container: Tube | Temporarily Out of Stock |
|
$14.8198 | Buy Now |
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IXFR102N30P
Littelfuse Inc
Buy Now
Datasheet
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IXFR102N30P
Littelfuse Inc
Power Field-Effect Transistor, 60A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.036 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 250 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |