There are no models available for this part yet.
Overview of IXFR16N120P by IXYS Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 5 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Price & Stock for IXFR16N120P by IXYS Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
747-IXFR16N120P
|
Mouser Electronics | MOSFETs 16 Amps 1200V 1 Rds RoHS: Compliant | 0 |
|
$16.6700 | Order Now | |
| Future Electronics | IXFR16 Series 1200 V 9A 6900 pF 230W N-Channel Power MOSFET - ISOPLUS247™ RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 26 Weeks Container: Tube | 0Tube |
|
$17.2700 | Buy Now | ||
| Quest Components | 24 |
|
$16.0950 / $19.5750 | Buy Now | |||
|
DISTI #
IXFR16N120P
|
TTI | MOSFETs 16 Amps 1200V 1 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
|
$14.9700 | Buy Now | |
|
DISTI #
IXFR16N120P
|
TME | Transistor: N-MOSFET, unipolar, 1.2kV, 9A, 230W, ISOPLUS247™ Min Qty: 1 | 10 |
|
$18.9800 / $26.9100 | Buy Now |
CAD Models for IXFR16N120P by IXYS Corporation
Part Data Attributes for IXFR16N120P by IXYS Corporation
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
IXYS CORP
|
|
Package Description
|
PLASTIC, ISOPLUS247, 3 PIN
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Additional Feature
|
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
800 mJ
|
|
Case Connection
|
ISOLATED
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
1200 V
|
|
Drain Current-Max (ID)
|
9 A
|
|
Drain-source On Resistance-Max
|
1.04 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-PSIP-T3
|
|
JESD-609 Code
|
e1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
230 W
|
|
Pulsed Drain Current-Max (IDM)
|
35 A
|
|
Qualification Status
|
Not Qualified
|
|
Reference Standard
|
UL RECOGNIZED
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN SILVER COPPER
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
10
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
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