Datasheets
IXFR230N20T by:

Power Field-Effect Transistor, 156A I(D), 200V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN

Part Details for IXFR230N20T by IXYS Corporation

Overview of IXFR230N20T by IXYS Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IXFR230N20T

Part # Distributor Description Stock Price Buy
DISTI # 747-IXFR230N20T
Mouser Electronics MOSFET GigaMOS Power MOSFET RoHS: Compliant 0
  • 300 $18.5700
$18.5700 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $18.8700
$18.8700 Buy Now
DISTI # IXFR230N20T
TTI MOSFET GigaMOS Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $18.9400
$18.9400 Buy Now
DISTI # IXFR230N20T
TME Transistor: N-MOSFET, unipolar, 200V, 156A, 600W, ISOPLUS247™ Min Qty: 1 18
  • 1 $28.1400
  • 3 $25.3400
  • 10 $22.4200
  • 30 $20.2700
$20.2700 / $28.1400 Buy Now
New Advantage Corporation MOSFET DIS.156A 200V N-CH ISOPLUS247 GIGAMOS RoHS: Compliant Min Qty: 1 Package Multiple: 1 24
  • 9 $40.5700
  • 24 $37.8700
$37.8700 / $40.5700 Buy Now

Part Details for IXFR230N20T

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IXFR230N20T Part Data Attributes:

IXFR230N20T IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFR230N20T IXYS Corporation Power Field-Effect Transistor, 156A I(D), 200V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description PLASTIC, ISOPLUS247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 156 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 600 W
Pulsed Drain Current-Max (IDM) 630 A
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFR230N20T

This table gives cross-reference parts and alternative options found for IXFR230N20T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR230N20T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT20M11JVR Power Field-Effect Transistor, 175A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR230N20T vs APT20M11JVR
APT20M11JVFR Power Field-Effect Transistor, 175A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR230N20T vs APT20M11JVFR
IXFR230N20T Power Field-Effect Transistor, Littelfuse Inc IXFR230N20T vs IXFR230N20T
APT20M11JLL Power Field-Effect Transistor, 176A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR230N20T vs APT20M11JLL

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