Datasheets
IXFR24N90P by:

Power Field-Effect Transistor, 13A I(D), 900V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

Part Details for IXFR24N90P by Littelfuse Inc

Overview of IXFR24N90P by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXFR24N90P

Part # Distributor Description Stock Price Buy
DISTI # 03AH0887
Newark Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube |Littelfuse IXFR24N90P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $12.0300
  • 500 $11.1800
$11.1800 / $12.0300 Buy Now
DISTI # IXFR24N90P-ND
DigiKey MOSFET N-CH 900V 13A ISOPLUS247 Min Qty: 300 Lead time: 46 Weeks Container: Tube Temporarily Out of Stock
  • 300 $13.3561
$13.3561 Buy Now

Part Details for IXFR24N90P

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IXFR24N90P Part Data Attributes

IXFR24N90P Littelfuse Inc
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IXFR24N90P Littelfuse Inc Power Field-Effect Transistor, 13A I(D), 900V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description IN-LINE, R-PSIP-T3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.46 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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