IXFR80N50P
Description: Power Field-Effect Transistor, 45A I(D), 500V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

Overview of IXFR80N50P by Littelfuse Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for IXFR80N50P by Littelfuse Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 03AH0909
Newark Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube |Littelfuse IXFR80N50P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $15.9800
$15.9800 Buy Now
DISTI # IXFR80N50P-ND
DigiKey MOSFET N-CH 500V 45A ISOPLUS247 Min Qty: 1 Lead time: 44 Weeks Container: Tube 120
In Stock
  • 1 $25.2200
  • 30 $17.4130
  • 120 $16.6764
$16.6764 / $25.2200 Buy Now

CAD Models for IXFR80N50P by Littelfuse Inc
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Part Data Attributes for IXFR80N50P by Littelfuse Inc

IXFR80N50P
Littelfuse Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
LITTELFUSE INC
Package Description
IN-LINE, R-PSIP-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
LITTELFUSE
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
3500 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
45 A
Drain-source On Resistance-Max
0.072 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
360 W
Pulsed Drain Current-Max (IDM)
200 A
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Surface Mount
NO
Terminal Finish
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IXFR80N50P
    Littelfuse Inc
    Power Field-Effect Transistor, 45A I(D), 500V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
    VS

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