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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0925
|
Newark | Discmsft Nchultrjnctn X3Class To-268Aa/Tube |Littelfuse IXFT150N30X3HV Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$16.1000 / $18.6800 | Buy Now |
DISTI #
IXFT150N30X3HV-ND
|
DigiKey | MOSFET N-CH 300V 150A TO268HV Min Qty: 1 Lead time: 32 Weeks Container: Tube |
503 In Stock |
|
$13.6666 / $20.6100 | Buy Now |
|
Future Electronics | X3-Class HiPerFETTMPower MOSFET RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 32 Weeks Container: Tube | 0Tube |
|
$15.7100 / $16.0200 | Buy Now |
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IXFT150N30X3HV
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFT150N30X3HV
Littelfuse Inc
Power Field-Effect Transistor,
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 150 A | |
Drain-source On Resistance-Max | 0.0083 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1.7 pF | |
JEDEC-95 Code | TO-268AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 890 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |