Datasheets
IXFT150N30X3HV by:

Power Field-Effect Transistor,

Part Details for IXFT150N30X3HV by Littelfuse Inc

Overview of IXFT150N30X3HV by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXFT150N30X3HV

Part # Distributor Description Stock Price Buy
DISTI # 03AH0925
Newark Discmsft Nchultrjnctn X3Class To-268Aa/Tube |Littelfuse IXFT150N30X3HV Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 25 $18.6800
  • 50 $18.2800
  • 100 $17.1900
  • 250 $16.1000
$16.1000 / $18.6800 Buy Now
DISTI # IXFT150N30X3HV-ND
DigiKey MOSFET N-CH 300V 150A TO268HV Min Qty: 1 Lead time: 32 Weeks Container: Tube 503
In Stock
  • 1 $20.6100
  • 30 $17.0833
  • 120 $16.0155
  • 510 $13.6666
$13.6666 / $20.6100 Buy Now
Future Electronics X3-Class HiPerFETTMPower MOSFET RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 0
Tube
  • 30 $16.0200
  • 60 $15.9200
  • 90 $15.8700
  • 120 $15.8300
  • 150 $15.7100
$15.7100 / $16.0200 Buy Now

Part Details for IXFT150N30X3HV

IXFT150N30X3HV CAD Models

IXFT150N30X3HV Part Data Attributes

IXFT150N30X3HV Littelfuse Inc
Buy Now Datasheet
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IXFT150N30X3HV Littelfuse Inc Power Field-Effect Transistor,
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 150 A
Drain-source On Resistance-Max 0.0083 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.7 pF
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 890 W
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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